digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n681-2n692, 2n5204-2n5207 silicon controlled rectifier available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings rating symbol 2n681-2n692 2n5204-2n5207 unit rms on-state current i t(rms) 25 35 a average on-state current i t(av) 16 22 a @ t c t c -65 to +65 -40 to +40 c peak one cycle surge @ 50 hz 145 285 a peak one cycle surge @ 60 hz i tsm 150 300 a fusing @ 50 hz 103 410 fusing @ 60 hz i 2 t 94 375 a 2 s gate current to trigger i gt 40 40 ma typical critical dv/dt exponential to v drm dv/dt - 100 v/s critical rate of rise di/dt 75-100 100 a/s typical junction temperature t j -65 to 125 -40 to 125 c voltage ratings (applied gate voltage zero or negative) v rrm , v drm maximum repetitive peak reverse and off-state voltage (v) v rsm maximum non-repetitive peak reverse voltage t p 5 ms (v) part number t j = -65 to +125c t j = -65 to +125c 2n681 25 35 2n682 50 75 2n683 100 150 2n685 200 300 2n687 300 400 2n688 400 500 2n689 500 600 2n690 600 720 2n691 700 840 2n692 800 960 t j = -40 to 125c t j = -40 to 125c 2n5204 600 720 2N5205 800 960 2n5206 1000 1200 2n5207 1200 1440 electrical characteristics symbol characteristics 2n681-2n692 2n5204- 2n5207 units conditions i t(rms) maximum rms on-state current 25 35 a i t(av) maximum average on-state current 16 22 a @ t c = -65 to +65 -40 to +40 c 180 half sine wave conduction 145 285 50 hz half cycle sine wave or 6 ms rectangular pulse 150 300 60 hz half cycle sine wave or 5 ms rectangular pulse following any rated load condition and with rated v rrm applied following surge 170 340 50 hz half cycle sine wave or 6 ms rectangular pulse i tsm maximum peak one cycle, non-repetitive surge current 180 355 a 60 hz half cycle sine wave or 5 ms rectangular pulse same conditions as above except with v rrm applied following surge = 0 103 410 t = 10 ms i 2 t maximum i 2 t capability, for fusing 94 375 a 2 s t = 8.3 ms rated v rrm applied following surge, initial t j = 125c 145 580 t = 10 ms i 2 t maximum i 2 t capability for individual device fusing 135 530 a 2 s t = 8.3 ms v rrm = 0 following surge, initial t j = 125c sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n681-2n692, 2n5204-2n5207 silicon controlled rectifier electrical characteristics symbol characteristics 2n681- 2n692 2n5204- 2n5207 units conditions i 2 t maximum i 2 t capability for individual device fusing (1) 1450 5800 a 2 s t = 0.1 to 10ms initial t j 125c, v rrm following surge = 0 v tm maximum peak on-state voltage 2 2.3 v t j = 25c, i t(av) = 16a(50a peak) ? 2n681 i t(av) = 22a (70a) peak ? 2n5204 i h maximum holding current 20 @ 25c 200 @-40c ma anode supply = 24v, initial i t = 1.0a blocking 100 typical 100 t j = 125c exponential to 100% rated v drm dv/dt minimum critical rate of rise of off-state voltage 250 typical 250 v/s t j = 125c exponential to 67% rated v drm maximum reverse and off-state current i r(av) & i d(av) (average values) i rm & i dm (peak values) v rrm & v drm = - - 25 to 150v 6.5 - 200 & 250v 6.0 - 300v 5.0 - 400v 4.0 - 500v 3.0 - 600v 2.5 3.3 700v 2.25 - 800v 2.0 2.5 1000v - 2.0 i r (-) & i d (-) 1200v - 1.7 ma t j = 125c, gate open circuited switching t d typical delay time 1 1 s t c = 25c, v dm = rated v drm , i tm = 10a dc resistive circuit. gate pulse: 10 v, 40 source, t p = 6s, t r = 0.1s maximum non-repetitive rate of rise of turned-on current v dm = 25 to 600 v 100 - v dm = 700 to 800 v 75 - t c = 125c, v dm = rated v drm , i tm = 2 x di/dt, gate pulse: 20v, 15 , t p = 6s, t r = 0.1 s maximum di/dt - 100 a/s t c = 125 c, v dm = 600v, i tm = 200a @ 400hz max. gate pulse: 20v, 15 ? , t p = 6s, t r = 0.1s max. triggering p gm maximum peak gate power 5 60 w t p 5ms ? 2n681 t p 500s ? 2n5204 p g(av) maximum average gate power 0.5 0.5 w i gm maximum peak positive gate current 2 2 a +v gm maximum peak positive gate voltage 10 - v -v gm maximum peak negative gate voltage 5 5 v 80 80 t c = min rated value. max. required gate trigger current is the lowest value which will trigger all units with 6v anode to cathode 40 40 t c = 25c maximum required dc gate current to trigger 18.5 20 t c = 125c i gt typical dc gate current to trigger 30 30 ma t c = 25c, 6v anode to cathode note 1: i 2 t for time t x i 2 t t x sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n681-2n692, 2n5204-2n5207 silicon controlled rectifier electrical characteristics symbol characteristics 2n681-2n692 2n5204- 2n5207 units conditions 3 3 t c = -65c. max. required gate trigger voltage is the lowest value which will trigger all units with 6v anode to cathode maximum required dc gate voltage to trigger 2 2 t c = 25c v gt typical dc gate voltage to trigger 1.5 1.5 v t c = 25c 6v anode to cathode v gd maximum dc gate voltage not to trigger 0.25 0.25 v t c = 125c. max. gate voltage not to trigger is the maximum value which will not trigger any unit with rated v drm anode to cathode thermal ?mechanical characteristics symbol characteristics 2n681-2n692 2n5204- 2n5207 units conditions t j operating junction temperature range -65 to 125 -40 to 125 c t stg storage temperature range -65 to 125 -40 to 125 c r thjc maximum internal thermal resistance, junction to case 1.5 1.5 c/w dc operation r thcs thermal resistance, case to sink 0.35 0.35 c/w mounting surface smooth, flat and greased mechanical characteristics case to-48 marking alpha-numeric pin out see below to-48 inches millimeters min max min max a 0.604 0.614 15.340 15.600 b 0.551 0.559 14.000 14.200 c 1.050 1.190 2.670 30.230 f 0.135 0.160 3.430 4.060 h - 0.265 - 6.730 j 0.420 0.455 10.670 11.560 k 0.620 0.670 15.750 17.020 l 0.300 0.350 7.620 8.890 q 0.055 0.085 1.400 2.160 t 0.501 0.505 12.730 12.830 sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n681-2n692, 2n5204-2n5207 silicon controlled rectifier sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n681-2n692, 2n5204-2n5207 silicon controlled rectifier sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n681-2n692, 2n5204-2n5207 silicon controlled rectifier sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n681-2n692, 2n5204-2n5207 silicon controlled rectifier sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
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